Low-temperature plasma-enahanced chemical vapor deposition of crystal silicon film from dichlorosilane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 44-48

  Liu, H ^a   Jung, S ^a   Fujimura, Y ^a   Fukai, C ^a   Shirai, H ^a   Toyoshima, Y ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Crystal Si; FTIR RAS; Mie scattering; rf glow discharge; SiH2Cl2; Surface reaction

Indexed keywords

CHLORINATED RUBBER PAINT; CRYSTAL GROWTH; HYDROGEN; HYDROGENATION; LOW TEMPERATURE EFFECTS; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SILANES; SURFACE CHEMISTRY;

DICHLOROSILANES; MIE SCATTERING;

SEMICONDUCTING FILMS;

EID: 0035071804     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.44     Document Type: Article

References (14)