Visible photoluminescence of Si clusters embedded in silicon nitride films by plasma-enhanced chemical vapor deposition

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 27, Issue 1-2, 2005, Pages 284-289

  Wang, Ying ^a   Shen, Dezhen ^a   Liu, Yichun ^a,b   Zhang, Jiying ^a   Zhang, Zhenzhong ^a   Liu, Yinglin ^a   Lu, Youming ^a   Fan, Xiwu ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

Nanostructures; Optical properties; PECVD; Photoluminescence

Indexed keywords

ANNEALING; ELECTRON TUNNELING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; INFRARED SPECTROMETERS; LIGHT SOURCES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS SILICON; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

BLUESHIFT; PEAK INTENSITY; SILICON NANOSTRUCTURES; SILICON-INTEGRATED CIRCUITS;

NANOSTRUCTURED MATERIALS;

EID: 14044277493     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.12.004     Document Type: Article

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