Carbon clusters as possible defects in the SiC-SiO2 interface

Journal of Computational and Theoretical Nanoscience

Volumn 6, Issue 6, 2009, Pages 1305-1310

  Dang, Hongli ^a   Gudipati, Ramkumar ^a   Liu, Yang ^a   Li, Ying ^a   Liu, Yingdi ^a   Peterson, Heather L ^a   Chisholm, Matthew F ^b   Biggerstaff, Trinity ^c   Duscher, Gerd ^b,d   Wang, Sanwu ^a  

^a UNIVERSITY OF TULSA   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c North Carolina State University   (United States)

^d University of Tennessee   (United States)

Author keywords

Carbon Clusters; Carbon Fullerence; Defects; Density Functional Theory; Electronic Structure; First Principles Quantum Mechanical Calculations; Interface States; Silicon Carbide; Silicon Dioxide; Wide Gap Semiconductors

Indexed keywords

BAND GAPS; CARBON ATOMS; CHANNEL MOBILITY; FIRST-PRINCIPLES; FIRST-PRINCIPLES QUANTUM-MECHANICAL CALCULATIONS; FIRST-PRINCIPLES THEORY; INTERFACE DEFECTS; INTERFACE STATES; INTERFACE TRAP DENSITY; POWER MICROELECTRONICS; QUANTUM-MECHANICAL CALCULATION; SILICON DIOXIDE; STATE DENSITIES; WIDE GAP SEMICONDUCTORS;

DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; MICROELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SILICON OXIDES; SOLID STATE PHYSICS;

CARBON CLUSTERS;

EID: 67449137996     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2009.1179     Document Type: Article

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