A monte carlo study of Hg0.7Cd0.3Te e-APD

IEEE Transactions on Electron Devices

Volumn 56, Issue 4, 2009, Pages 569-577

  Derelle, Sophie ^a   Bernhardt, Sylvie ^a   Haïar, Riad ^a   Primot, Jérǒme ^a   Deschamps, Joël ^a   Rothman, Johan ^b  

^a ONERA   (France)

^b CEA LETI   (France)

Author keywords

Alloy scattering; Dead space; Electron initiated avalanche photodiode (e APD); HgCdTe; Impact ionization; Infrared; Low excess noise factor; Monte Carlo (MC) simulation; Multiplication gain; Polar optical phonon (POP) scattering

Indexed keywords

ALLOY SCATTERING; DEAD SPACE; HGCDTE; INFRARED; LOW EXCESS NOISE FACTOR; MONTE CARLO (MC) SIMULATION; MULTIPLICATION GAIN; POLAR OPTICAL PHONON (POP) SCATTERING;

AVALANCHE PHOTODIODES; CADMIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED OPTOELECTRONICS; MERCURY (METAL); MERCURY COMPOUNDS; MONTE CARLO METHODS; PHONONS; PHOTODIODES; SCATTERING; TELLURIUM COMPOUNDS;

IMPACT IONIZATION;

EID: 67349177488     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2012526     Document Type: Article

References (53)

1. T. J. de Lyon, B. Baumgratz, G. Chapman, E. Gordon, A. T. Hunter, M. Jack, J. E. Jensen, W. Johnson, B. Johs, K. Kosai, W. Larsen, G. L. Olson, M. Sen, B. Walker, and O. K.Wu, "MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 m photodetection," J. Cryst. Growth, vol. 201/202, no. 3, pp. 980-984, 1999.
2. J. Beck, C. Wan, M. Kinch, and J. Robinson, "MWIR HgCdTe avalanche photodiodes," in Proc. SPIE - Mater. Infrared Detectors, 2001, vol. 4454, pp. 188-197.
3. J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, and J. Campbell, "The HgCdTe electron avalanche photodiodes," in Proc. SPIE - Mater. Infrared Detectors Devices, 2004, vol. 5564, pp. 44-53.
4. J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, and J. Campbell, "The HgCdTe electron avalanche photodiode," J. Electron. Mater., vol. 35, no. 6, pp. 1167-1173, Jun. 2006.
5. M. A. Kinch, J. D. Beck, C.-F. Wan, F. Ma, and J. Campbell, "HgCdTe electron avalanche photodiodes," J. Electron. Mater., vol. 33, no. 6, pp. 630-639, Jun. 2004.
6. R. S. Hall, N. T. Gordon, J. Giess, J. E. Hails, A. Graham, D. C. Herbert, D. J. Hall, P. Southern, J. W. Cairns, D. J. Lees, and T. Ashley, "Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes," Proc. SPIE, vol. 5783, pp. 412-423, 2005.
7. G. Perrais, J. Rothman, G. Destefanis, J. Baylet, P. Castelein, J.-P. Chamonal, and P. Tribolet, "Demonstration of multifunctional bi-colour-avalanche gain detection in HgCdTe FPA," Proc. SPIE, vol. 6395, p. 639 50H, 2006.
8. M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin, and K. A. Gustavsen, "HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays," Proc. SPIE, vol. 6294, p. 629 403, 2006.
9. J. Rothman, G. Perrais, G. Destefanis, J. Baylet, P. Castelein, and J.-P. Chamonal, "High performance characteristics in pin MW HgCdTe e-APDs," Proc. SPIE, p. 654 219, 2007.
10. 0.7Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 μm," IEEE Trans. Electron Devices vol. ED-32, no. 7, pp. 1302-1306, Jul. 1985.
11. N. Z. Hakim, B. A. E. Saleh, and M. C. Teich, "Signal-to-noise ratio for lightwave systems using avalanche photodiodes," J. Lightw. Technol., vol. 9, no. 3, pp. 318-320, Mar. 1991.
12. A. T. Hunter, "Avalanche photodiodes for detection of eye-safe laser pulses," in Proc. SPIE Conf. Photodetectors: Mater. Devices IV, 1999, vol. 3629, pp. 250-255.
13. R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, no. 1, pp. 164-168, Jan. 1966.
14. Y. Okuto and C. R. Crowell, "Ionization coefficients in semiconductors: A nonlocalized property," Phys. Rev. B, Condens. Matter, vol. 10, no. 10, pp. 4284-4296, Nov. 1974.
15. M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 546-552, Mar. 1992.
16. R. J. McIntyre, "A new look at impact ionization - Part I: A theory of gain, noise, breakdown probability, and frequency response," IEEE Trans. Electron Devices, vol. 46, no. 8, pp. 1623-1631, Aug. 1999.
17. C. Jacobini and L. Reggiani, "Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, no. 3, pp. 645-705, Jul. 1983.
18. C. Canali, C. Jacobini, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, "Electron drift velocity in silicon," Phys. Rev. B, Condens. Matter vol. 12, no. 4, pp. 2265-2284, 1975.
19. M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Phys. Rev. B, Condens. Matter, vol. 38, no. 14, pp. 9721-9745, Nov. 1988.
20. N. Sano, T. Aoki, M. Tomizawa, and A. Yoshii, "Electron transport and impact ionization in Si," Phys. Rev. B, Condens. Matter, vol. 41, no. 17, pp. 12 122-12 128, Jun. 1990.
21. H. Shichijo and K. Hess, "Band-structure-dependent transport and impact ionization in GaAs," Phys. Rev. B, Condens. Matter, vol. 23, no. 8, pp. 4197-4207, Apr. 1981.
22. G. M. Dunn, G. J. Rees, J. P. R. David, S. A. Plimmer, and D. C. Herbert, "Monte Carlo simulation of high field transport and impact ionization in GaAs p + in+ diodes," IEEE Trans. Electron Devices, vol. 43, no. 12, pp. 2303-2305, Dec. 1996.
23. G. M. Dunn, G. J. Rees, and J. P. R. David, "Monte Carlo simulation of impact ionisation in photodetectors," Electron. Lett., vol. 33, no. 4, pp. 337-339, Feb. 1997.
24. D. S. Ong, K. F. Li, G. J. Rees, G. M. Dunn, J. P. R. David, and P. N. Robson, "A Monte Carlo investigation of multiplication noise in thin p + -i-n+ GaAs avalanche photodiodes," IEEE Trans. Electron Devices vol. 45, no. 8, pp. 1804-1810, Aug. 1998.
25. S. A. Plimmer, J. P. R. David, D. S. Ong, and K. F. Li, "A simple model for avalanche multiplication including deadspace effects," IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 769-775, Apr. 1999.
26. M. Stobbe, R. Redmer, and W. Schattke, "Impact ionization rate in GaAs," Phys. Rev. B, Condens. Matter, vol. 49, no. 7, pp. 4494-4500, Feb. 1994.
27. 0.47As," J. Appl. Phys., vol. 96, no. 10, pp. 5649-5653, Nov. 2004.
28. C. Groves, J. P. R. David, G. J. Rees, and D. S. Ong, "Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes," J. Appl. Phys., vol. 95, no. 11, pp. 6245-6251, Jun. 2004.
29. xTe," J. Appl. Phys., vol. 45, no. 3, pp. 1463-1465, Mar. 1974.
30. xTe," Phys. Rev. B, Condens. Matter, vol. 12, no. 12, pp. 5676-5681, Dec. 1975.
31. S. D. Yoo and K. D. Kwack, "Theoretical calculation of electron mobility in HgCdTe," J. Appl. Phys., vol. 81, no. 2, pp. 719-725, Jan. 1997.
32. xTe (x =0.205)," Phys. Lett. A, vol. 81, no. 4, pp. 241-242, 1981.
33. xTe," Phys. Rev. Lett., vol. 69, no. 8, pp. 1280-1282, Aug. 1992.
34. B. Gelmont, B. Lund, K-S. Kim, G. U. Jensen,M. Shur, and T. A. Fjeldly, "Monte Carlo simulation of electron transport in mercury cadmium telluride," J. Appl. Phys., vol. 71, no. 10, pp. 4977-4982, May 1992.
35. F. Ma, S.Wang, X. Li, K. A. Anselm, X. G. Zheng, A. L. Holmes, Jr., and J. C. Campbell, "Monte Carlo simulation of low noise avalanche photodiodes with heterojunctions," J. Appl. Phys., vol. 92, no. 8, pp. 4791-4795, Oct. 2002.
36. 0-3Te avalanche photodiodes and resonance phenomenon in the multiplication noise," Appl. Phys. Lett. vol. 83, no. 4, pp. 785-787, Jul. 2003.
37. F. Ma, "Monte Carlo simulation of gain, noise, and speed of low-noise and high-speed avalanche photodiodes," Ph.D. dissertation, Elect. Eng., Univ. Texas, Austin, TX, 2003.
38. D. C. Herbert, P. A. Childs, R. A. Abram, G. C. Crow, and M. Walmsley, "Self-consistent 2-D Monte Carlo simulations of InSb APD," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2175-2181, Oct. 2005.
39. A.-B. Chen and A. Sher, "CPA band calculation for (Hg, Cd) Te," J. Vac. Sci. Technol., vol. 21, no. 1, pp. 138-141, 1982.
40. J. Rothman, J. Meilhan, G. Perrais, J.-P. Belle, and O. Gravrand, "Maximum entropy mobility spectrum analysis of HgCdTe heterostructures," J. Electron. Mater., vol. 35, no. 6, pp. 1174-1184, 2006.
41. E. M. Conwell and M. O. Vassel, "High-field transport in n-type GaAs," Phys. Rev., vol. 166, no. 3, pp. 797-821, Feb. 1968.
42. W. Fawcett, D. A. Broadman, and Swain, "Monte Carlo determination of electron transport properties in Gallium Arsenide," J. Phys. Chem. Solids, vol. 31, no. 9, pp. 1963-1990, 1970.
43. D. N. Talwar and M. Vandevyver, "Vibrational properties of HgCdTe system," J. Appl. Phys., vol. 56, no. 6, pp. 1601-1607, Sep. 1984.
44. E. Conwell and V. F. Weisskopf, "Theory of impurity scattering in semiconductors," Phys. Rev., vol. 77, no. 3, pp. 388-390, Feb. 1950.
45. J. W. Harrison and J. R. Hauser, "Alloy scattering in ternary III-V compounds," Phys. Rev. B, Condens. Matter, vol. 13, no. 12, pp. 5347-5350, Jun. 1976.
46. L. Makovski and M. Glicksman, "Disorder scattering in solid solutions of III-V semiconducting compounds," J. Phys. Chem. Solids, vol. 34, no. 3, pp. 487-492, 1973.
47. D. K. Ferry, "Alloy scattering in ternary III-V compounds," Phys. Rev. B, Condens. Matter, vol. 17, no. 2, pp. 912-913, Jan. 1978.
48. J. C. Phillips, "Ionicity of the chemical bond in crystals," Rev. Mod. Phys., vol. 42, no. 3, pp. 317-356, 1970.
49. L. V. Keldysh, "Kinetic theory of impact ionization in semiconductors," Sov. Phys. - JETP, vol. 37, no. 10, pp. 509-518, 1960.
50. B. K. Ridley, "Anatomy of the transferred-electron effect in III-V semiconductors," J. Appl. Phys., vol. 48, no. 2, pp. 754-764, Feb. 1977.
51. xTe," J. Appl. Phys. vol. 53, no. 10, pp. 7099-7101, Oct. 1982.
52. J. S. Marsland, R. C.Woods, and C. A. Brownhill, "Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including the dead space effect," IEEE Trans. Electron Devices, vol. 39, no. 5, pp. 1129-1135, May 1992.
53. J. S. Marsland, "Nonlocal impact ionisation coefficients derived from Monte Carlo calculations," Electron. Lett., vol. 38, no. 1, pp. 55-57, Jan. 2002.