Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5783, Issue PART I, 2005, Pages 412-423

  Hall, Ralph S ^a   Gordon, Neu T ^a   Giess, Jean ^a   Hails, Janet E ^a   Graham, Andrew ^a   Herbert, David C ^a   Hall, David J ^a   Southern, Paul ^a   Cairns, John W ^a   Lees, David J ^a   Ashley, Timothy ^a  

^a QINETIQ   (United Kingdom)

Author keywords

Cryogenic infrared avalanche photodiodes; Dark current; Excess noise factor; HgCdTe; Impact ionization; MWIR detectors; Photomultiplication; Spectral response; SWIR detectors

Indexed keywords

AVALANCHE DIODES; ELECTRIC POTENTIAL; IMAGING SYSTEMS; IMPACT IONIZATION; LIGHTING; OPTICAL FILTERS; PHOTODIODES; PHOTOMULTIPLIERS;

CRYOGENIC INFRARED AVALANCHE PHOTODIODE; DARK CURRENT; EXCESS NOISE FACTOR; HGCDTE; MWIR DETECTORS; PHOTOMULTIPLICATION; SPECTRAL RESPONSE; SWIR DETECTORS;

INFRARED DETECTORS;

EID: 26444458836     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.603386     Document Type: Conference Paper

References (21)

1. M. J. Halmos, Eyesafe 3-D Flash Ladar For Targets Under Obscuration, Proc. SPIE 5086, 70 (2003)
2. I. M. Baker, S. S. Duncan, and J. W. Copley, A low-noise laser-gated imaging system for long-range target identification, Proc. SPIE 5406, 133 (2004)
3. P. Capper (Ed.), Properties of Narrow Gap Cadmium-based Compounds, INSPEC Datareview Series, Inst. Electrical Engineers, London (1994)
4. R. J. McIntyre, Multiplication noise in uniform avalanche photodiodes, IEEE Trans. Electron Devices 13, 164 (1966).
5. M. Royer, T. Brossat, P. Fragnon, J. Meslage, G. Pichard and T. Nguyen Duy, Ann. Telecomm. (France) 38 62-72 (1983), Detecteurs HgCdTe pour telecommunication par fibre optics (HgCdTe detectors for fibre optic telecommunications)
6. T. Nguyen Duy, A. Rurand and J. L. Lyot, Bulk crystal growth of Hg(1-x)Cd(x)Te for avalanche photodiode applications, Mat. Res. Soc. Symp. Proc. 90 81-90 (1987)
7. B. Orsal, R. Alabedra, A. Maatougui and J. C. Flachet, HgCdTe x=0.44 1.6um to 2.5um avalanche photodiode and noise study far from resonant impact ionization, IEEE Trans. Electron Dev. 38 1748-1756 (1991),
8. G. P. Lecoy, B. Orsal and R. Alabedra, Impact Ionization resonance in HgCdTe (0.6<=x<=0.7), Impact Ionization resonance in HgCdTe (0.6<=x<=0.7), IEEE J. Quantum Electron. QE-23 1145-1154 (1987)
9. B. Orsal, R. Alabedra, M. Valenza, G. Pichard and J. Meslage, Impact ionisation rates for electrons and holes in HgCdTe (x=0.7) in avalanche photodiodes for optical fiber transmission systems at wavelength 1.3μm, J. Cryst. Growth 72 496-503 (1985),
10. B. Orsal, R. Alabedra, C. Maille, C. Boisrobert, D. Morvan, J. Meslage. and G. Pichard, Caracterisation en bruit des photodiodes p-i-n HgCdTe a lambda=1,3μm (Noise characterisation of HgCdTe pin photodiodes at 1.3μm), Revue Phys. Appl. 19 63-67 (1984)
11. S. H. Shin, J. G. Pasko, H. D. Law and D. T. Cheung, 1.22μm HgCdTe/CdTe avalanche photodiodes, Appl. Phys. Lett. 40 965-967 (1982)
12. C. T. Elliott, N. T. Gordon, R. S. Hall and G. Crimes, Reverse bias breakdown in long wavelength lateral collection CMT diodes, J. Vac. Sci. Technol. A8 1251-1253 (1990)
13. T. J. de Lyon, B. Baumgratz, G. Chapman, E. Gordon, A. T. Hunter, M. Jack, I.E. Jensen, Johnson, B. Johs, K. Kosai, W. Larsen, G.L. Olson, M. Sen, and B. Walker, Epitaxial growth of HgCdTe 1.55 μm avalanche photodiodes by molecular-beam epitaxy, Proc. SPIE 3629, 256, (1999)
14. M. Jack, J. Asbrock, C Anderson, S. Bailey, G. Chapman, E. Gordon, P. Herning, M. Kalisher, K. Kosai, V. Liquori, V. Randall, J. Rosbeck, S. Sen, P. Wetzel, M Halmos, P. Trotta, A. Hunter, J. Jensen, T. De Lyon, W. Johnson, B. Walker, W. Trussel, A. Hutchinson, and R. Balcerak, Advances in Linear and Area HgCdTe APD Arrays For Eyesafe LADAR Sensors, Proc. SPIE 4454 198 (2001)
15. J. D. Beck, C.-F. Wan, M. A. Kinch, and J. E. Robinson, MWIR HgCdTe avalanche photodiodes, Proc. SPIE 4454, 188 (2001)
16. R. J. McIntyre, A new look at impact ionization-Part I: A theory of gain, noise, breakdown probability, and frequency response, IEEE Trans. Electron Devices 46, 1623 (1999);
17. P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, A new look at impact ionizationPart II: Gain and noise in short avalanche photodiodes, IEEE Trans.Electron Devices 46, 1632 (1999)
18. G. Leveque, M. Nasser, D. Bertho, B. Orsal and R. Alabedra, Ionization energies in CdHgTe avalanche photodiodes, Semicond. Sci. Technol., 8 1317-1323 (1993)
19. M.A. Kinch, J.D. Beck, C.-F.Wan, F. Ma and J. Campbell, HgCdTe Electron Avalanche Photodiodes, J. Electronic Materials, 33, (6), 630 (2004)
20. 0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise, Appl. Phys. Lett. 83, (4), 785-787 (2003)
21. D. J. Hall, L. Buckle, N. T. Gordon, J. Giess, J. E. Hails, J. W. Cairns, R. M. Lawrence, A. Graham, R. S. Hall, C. Maltby, and T. Ashley, High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates, Appl. Phys. Lett. 85, (11) 2113 (2004)