The HgCdTe electron avalanche photodiode

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5564, Issue , 2004, Pages 44-53

  Beck, J ^a   Wan, C ^a   Kinch, M ^a   Robinson, J ^a   Mitra, P ^a   Scritchfield, R ^a   Ma, F ^b   Campbell, J ^b  

^a DRS Sensors and Targeting Systems Inc   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Avalanche photodiode; Bandwidth; Excess noise factor; Gain; HgCdTe; Infrared; Ionization coefficient; Mercury cadmium telluride; Monte Carlo; Noise equivalent input

Indexed keywords

AVALANCHE PHOTODIODES; EXCESS NOISE FACTOR; GAIN; HGCDTE; IONIZATION COEFFICIENTS; MERCURY CADMIUM TELLURIDE; MONTE CARLO; NOISE EQUIVALENT INPUT;

ACOUSTIC NOISE; AVALANCHE DIODES; BANDWIDTH; MATHEMATICAL MODELS; MERCURY COMPOUNDS; MONTE CARLO METHODS; PHOTOIONIZATION; RESONANCE;

PHOTODIODES;

EID: 15944376893     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.565142     Document Type: Conference Paper

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