Monte Carlo simulation of high field transport and impact ionization in GaAs p+in+ diodes

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2303-2305

  Dunn, G M ^a   Rees, G J ^a   David, J P R ^b   Plimmer, S A ^b   Herbert, D C ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSPORT PROPERTIES;

HIGH FIELD TRANSPORT; IMPACT IONIZATION;

SEMICONDUCTOR DIODES;

EID: 0030379907     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544426     Document Type: Article

References (10)

1. B. K. Ridley, "Soft-Threshold lucky drift theory of impact ionization in semiconductors," Semicond. Sci. Technol., vol. 2, p. 116, 1987.
2. D. C. Herbert, "Breakdown voltage in ultra thin PIN diodes," Semicond. Sci. Technol., vol. 8, p. 1993, 1993.
3. P. G. Scrobohaci and T.-W Tang, "Modeling of the hot-electron subpopulation and its application to impact ionization in submicron silicon devices - Part I: Transport equations," IEEE Trans. Electron Devices, vol. 41, p. 1197, 1994.
4. M. V. Fischetti, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blend structures - Part 1: Homogeneous transport," IEEE Trans. Electron Devices, vol. 38, p. 634, 1991.
5. M. L. Cohen and T. K. Bergstresser, "Band structures and pseudopotential form factors for the fourteen semiconductors of the diamond and zinc-blend structures," Phys. Rev., vol. 141, p. 789, 1966.
6. C. Jacoboni and P. Lugli, The Monte Carlo Method For Semiconductor Device Simulation, S. Selberherr, Ed. New York: Springer-Verlag, 1989, ch. 1-3.
7. F. Osaka, T. Mikawa, and O. Wada, "Analysis of impact ionization phenomena in InP by Monte Carlo simulation," Jpn. J. Appl. Phys., vol. 25, p. 394, 1986.
8. M. Ershov and V. Ryzhii, "Procedure for fitting Monte Carlo calculated impact ionization coefficients to experiment," J. Appl. Phys. vol. 76, p. 1672, 1994.
9. S. A. Plimmer, J. P. R. David, D. C. Herbert, G. J. Rees, P. A. Houston, P. N. Robson, R. Grey, T. W. Lee, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Devices, vol. 43, pp. 1066-1072, July 1996.
10. G. E. Bulman, V. M. Robbins, and E. Stillman, "The determination of impact ionization coefficients in (100) GaAs using avalanche noise and photocurrent multiplication measurements," IEEE Trans. Electron Devices, vol. ED-32, p. 2454, 1985.