Microstructural characterization of rf sputtered polycrystalline silicon germanium films

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 444-450

  Choi, W K ^a   Teh, L K ^a   Bera, L K ^a   Chim, W K ^a   Wee, A T S ^a   Jie, Y X ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; IMPURITIES IN; MICRO-STRUCTURAL CHARACTERIZATION; MICROTWINS; NUCLEATING SITES; POLYCRYSTALLINE SILICON GERMANIUMS; RF-SPUTTERING; SI MATRIX; SMALL GRAINS; STRAIN-FREE; TRANSMISSION ELECTRON MICROSCOPY TEM; XRD;

ATOMIC FORCE MICROSCOPY; POLYSILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GERMANIUM;

EID: 0036137166     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1423388     Document Type: Article

References (32)

1. T. J. King, K. C. Sarawat, and J. R. Pfiester, IEEE Electron Device Lett. 12, 584 (1991).
2. P. E. Hellberg, S. L. Zhang, F. M. d'Heurle, and C. S. Petersson, J. Appl. Phys. 82, 5773 (1997).
3. H. Y. Tong, T. J. King, and F. G. Shi, Thin Solid Films 290,291, 464 (1996).
4. J. B. Rem, M. C. V. de Leuw, J. Hollerman, and J. F. Verweij, Thin Solid Films 296, 152 (1997).
5. Z. Jin, B. A. Gururaj, M. W. Y. Yeung, H. S. Kwok, and M. Wong, IEEE Trans. Electron Devices 44, 1958 (1997).
6. Z. Sun, K. Y. Tong, and W. B. Lee, Thin Solid Films 288, 224 (1996).
7. E. V. Jelenkovic, K. Y. Tong, Z. Sun, C. L. Mak, and W. Y. Cheung, J. Vac. Sci. Technol. A 15, 2836 (1997).
8. E. V. Jelenkovic, K. Y. Tong, W. Y. Cheung, I. H. Wilson, S. P. Wong, and M. C. Poon, Thin Solid Films 368, 55 (2000).
9. T. Serikawa, S. Shirai, A. Okamoto, and S. Suyama, IEEE Trans. Electron Devices 36, 1929 (1989).
10. J. A. Tsai, A. J. Tang, T. Noguchi, and R. Reif, J. Electrochem. Soc. 142, 3220 (1995).
11. T. J. King and K. C. Sarawat, J. Electrochem. Soc. 141, 2235 (1994).
12. J. Olivares, P. Martin, A. Rodriguez, J. Sangrador, J. Jimenez, and T. Rodriguez, Thin Solid Films 358, 56 (2000).
13. C. W. Hwang, M. K. Ryu, K. B. Kim, S. C. Lee, and C. S. Kim, J. Appl. Phys. 77, 3042 (1995).
14. V. Z. O. Li, M. R. Mirabedini, B. E. Hornung, H. H. Heinisch, M. Xu, D. Batchelor, D. M. Maher, J. J. Wortman, and R. T. Kuehn, J. Appl. Phys. 83, 5469 (1998).
15. C. Saha, S. Das, S. K. Ray, and S. K. Lahiri, J. Appl. Phys. 83, 4472 (1998).
16. S. Sedky, P. Fiorini, M. Caymax, S. Loreti, K. Baert, L. Hermans, and R. Mertens, J. Microelectromech. Syst. 7, 365 (1998).
17. M. Bendayan, R. Baserman, F. Edelman, Y. Komem, and S. S. Iyer, Appl. Surf. Sci. 65,66, 489 (1993).
18. T. I. Kamins, Polycrystalline Silicon for Integrated Circuits and Display (Kluwer, Dordrecht, 1998).
19. L. Mei, M. Rivier, Y. Kwark, and R. W. Dutton, J. Electrochem. Soc. 129, 1791 (1982).
20. Z. Sun, K. Y. Tong, and W. B. Lee, Thin Solid Films 288, 224 (1996).
21. C. V. Thompson, Mater. Res. Soc. Symp. Proc. 343, 3 (1994).
22. D. Balzar and H. Ledbetter, Adv. X-Ray Anal. 38, 397 (1995).
23. D. Balzar and H. Ledbetter, Adv. X-Ray Anal. 39, 457 (1997).
24. J. C. Tsang, P. M. Mooney, F. Dacol, and J. O. Chu, J. Appl. Phys. 75, 8098 (1994).
25. M. Fujii, S. Hayashi, and K. Yamamoto, Jpn. J. Appl. Phys., Part 1 30, 687 (1991).
26. N. N. Ovsyuk, E. B. Gorokhov, V. V. Grishchenko, and A. P. Shebanin, JETP Lett. 47, 298 (1988).
27. M. I. Alonzo and K. Winer, Phys. Rev. B 39, 10056 (1989).
28. T. Ishidate, S. Katagiri, K. Inoue, M. Shibuya, K. Tsuji, and S. Minomura, J. Phys. Soc. Jpn. 53, 2584 (1984).
29. I. P. Herman and F. Magnotta, J. Appl. Phys. 61, 5118 (1987).
30. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. 39, 625 (1981).
31. M. A. Renucci, J. B. Renucci, and M. Cardona, Light Scattering in Solids (Flammarion, Paris, 1971), p. 326.
32. W. J. Brya, Solid State Commun. 12, 253 (1973).