A wideband redictive "double-π" equivalent-circuit model for on-chip spiral inductors

IEEE Transactions on Electron Devices

Volumn 56, Issue 4, 2009, Pages 609-619

  Wang, Chuan ^a   Liao, Huailin ^a   Li, Chen ^a   Huang, Ru ^a   Wong, Waisum ^b   Zhang, Xin ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

"Double "; Equivalent circuit; Physical model

Indexed keywords

CAPACITIVE COUPLING EFFECTS; CAPACITIVE LOSS; CIRCUIT COMPONENTS; DIFFERENT GEOMETRIES; DISTRIBUTED EFFECTS; EQUIVALENT-CIRCUIT MODELS; FABRICATION PARAMETERS; HIGH FREQUENCIES; INDUCTIVE COUPLINGS; MEASURED DATUM; MODEL PARAMETERS; MULTI-TURN INDUCTORS; NETWORK PARAMETERS; ON-CHIP SPIRAL INDUCTORS; PARASITIC EFFECTS; PHYSICAL MODEL; PROCESS PARAMETERS; PROXIMITY EFFECTS; QUASI-LINEAR RELATIONSHIPS; RF IC DESIGNS; RF-CMOS; WIDE BANDS; WIDE FREQUENCY RANGES;

CIRCUIT THEORY; ELECTRIC CONDUCTORS; ELECTRIC INDUCTORS; SKIN; SKIN EFFECT; SUBSTRATES;

DIELECTRIC MATERIALS;

EID: 67349159060     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2014184     Document Type: Article

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