Design of multiple-metal stacked inductors incorporating an extended physical model

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 6 II, 2005, Pages 2063-2072

  Murphy, Olive H ^a   McCarthy, Kevin G ^a   Delabie, Christophe J P ^b   Murphy, Aidan C ^a   Murphy, Patrick J ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Ecole Superieure d'Ingenieurs en   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Integrated stacked inductor model; Patterned ground shield (PCS); Q improvement; Q prediction

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; COST EFFECTIVENESS; FREQUENCIES; INDUCTANCE; MATHEMATICAL MODELS; MICROWAVES; MULTILAYERS;

INTEGRATED STACKED INDUCTOR MODEL; PATTERNED GROUND SHIELD (PGS); Q IMPROVEMENT; Q PREDICTION;

ELECTRIC INDUCTORS;

EID: 23244445019     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.848813     Document Type: Conference Paper

References (31)

1. D. H. Weon, J. H. Jeon, J. I. Kim, S. Mohammadi, and L. P. B. Katehi, "High-Q integrated 3-D inductors and transformers for high frequency applications," in IEEE MTT-S Int. Microwave Symp. Dig., Jun. 2004, pp. 877-880.
2. M. F. Davis, S. W. Yoon, S. Pinel, K. Lim, and J. Laskar, "Liquid crystal polymer-based integrated passive development for RF applications," in IEEE MTT-S Int. Microwave Symp. Dig., Jun. 2003, pp. 1155-1158.
3. T. S. Horng, J. M. Wu, L. Q. Yang, and S. T. Fang, "A novel modified-T equivalent circuit for modeling LTCC embedded inductors with a large bandwidth," IEEE Trans. Microw. Theory Tech., vol. 51, no. 12, pp. 2327-2333, Dec. 2003.
4. O. H. Murphy and P. J. Murphy, "Low temperature co-fired ceramic and its applications at high frequencies," in Proc. Irish Signals and Systems Conf., Jun. 2002, pp. 333-338.
5. Y. S. Lin, C. C. Liu, K. M. Li, and C. H. Chen, "Design of an LTCC tri-band transceiver module for GPRS mobile applications," IEEE Trans. Microw. Theory Tech., vol. 52, no. 12. pp. 2718-2724. Dec. 2004.
6. M. Danesh and J. R. Long, "Differentially driven symmetric microstrip inductors," IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 332-341, Jan. 2002.
7. S. M. Yim, T. Chen, and K. K. O, "The effects of a ground shield on the characteristics and performance of spiral inductors," IEEE J. Solid-State Circuits, vol. 7, no. 2, pp. 237-244, Feb. 2002.
8. C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF IC's," IEEE J. Solid-State Circuits, vol. 33, no. 5, pp. 743-752. May 1998.
9. Y. S. Choi and J. B. Yoon, "Experimental analysis of the effect of metal thickness on the quality factor in integrated spiral inductors for RFIC 's," IEEE Electron Device Lett., vol. 25, no. 2, pp. 76-79, Feb. 2004.
10. M. Soyuer, J. N. Burghartz, K. A. Jenkins, S. Ponnapalli, J. F. Ewen, and W. E. Pence, "Multilevel monolithic inductors in silicon technology," Electron. Lett., vol. 31, no. 5, pp. 359-360, Mar. 1995.
11. O. H. Murphy, K. G. McCarthy, C. Delabie, A. C. Murphy, T. Chan, and P. J. Murphy, "Differential inductor design incorporating multiple Q-enhancement techniques and expanded physical model," in Proc. 34th Eur. Microwaves Conf., Amsterdam, The Netherlands, Oct. 11-15, 2004, pp. 1373-1376.
12. A. C. Watson, D. Melendy, P. Francis, K. Hwang, and A. Weisshaar, "A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs," IEEE Trans. Microw. Theory Tech., vol. 52, no. 3, pp. 849-857, Mar. 2004.
13. A. Scuderi, T. Biondi, E. Ragonese, and G. Palmisano, "A scalable model for silicon spiral inductors," in IEEE MTT-S Int. Microwave Symp. Dig., Jun. 2003, pp. 2117-2120.
14. C. P. Yue, C. Ryu, J. Lau, T. Lee, and S. S. Wong, "A physical model for planar spiral inductors on silicon," in Proc. Int. Electron Devices Meeting, Dec. 1996, pp. 155-158.
15. P. Lorrain and D. Corson, Electromagnetic Fields and Waves, 1st ed. San Francisco, CA: Freeman, 1969, ch. 8, pp. 335-335.
16. W. B. Kuhn, X. He, and M. Mojarradi, "Modeling spiral inductors in SOS process," IEEE Trans. Electron Devices, vol. 51, no. 5, pp. 677-683, May 2004.
17. M. C. Hsieh, Y. K. Fang, C. H. Chen, S. M. Chen, and W. K. Yeh, "Design and fabrication of deep submicron CMOS technology compatible suspended high-Q spiral inductors," IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 324-331, Mar. 2004.
18. S.S. Mohan, M. del Mar Henshenson, S. P. Boyd, and T. H. Lee, "Simple accurate expressions for planar spiral inductances," IEEE J. Solid-State Circuits, vol. 34, no. 10, pp. 1419-1424, Oct. 1999.
19. F. W. Grover, Inductance Calculations. New York: Dover, 1964, ch. 5, pp. 31-34.
20. A. B. Glaser and G. E. Subak-Sharpe, Integrated Circuit Engineering, 2nd ed. Reading, MA: Addison-Wesley, 1979, ch. 4, pp. 118-118.
21. J. Sieiro, J. K. Lopez-Villegas, J. Cabanillas, J. A. Osorio, and J. Samitier, "A physical frequency-dependent compact model for RF integrated inductors," IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 384-392, Jan. 2002.
22. S. C. Wong, G. Y. Lee, and D. J. Ma, "Modeling of interconnect capacitance, delay and crosstalk in VLSI," IEEE Trans. Semicond. Manuf., vol. 13, no. 1, pp. 108-111, Feb. 2000.
23. W. B. Kuhn, "Analysis of current crowding effects in multiturn spiral inductors," IEEE Trans. Microw. Theory Tech., vol. 49, no. 1, pp. 31-38, Jan. 2001.
24. C. B. Sia, K. S. Yeo, M. A. Do, and J.-G. Ma, "Metallization proximity studies for copper spiral inductors on silicon," IEEE Trans. Semicond. Manuf., vol. 16, no. 2, pp. 220-227, May 2003.
25. Y. Cao, R. A. Groves, N. D. Zamdmer, J.-O. Plouchart, R. A. Wachnik, X. Huang, T.-J. King, and C. Hu, "Frequency-independent equivalent circuit model for on-chip spiral inductors," in Proc. IEEE Custom Integrated Circuits Conf., May 2002, pp. 217-220.
26. J. Gil and H. Shin, "A simple wide-band on-chip inductor model for silicon-based RF ICs," IEEE Trans. Microw. Theory Tech., vol. 51, no. 9, pp. 2023-2028, Sep. 2003.
27. C. P. Yue and S. S. Wong, "A study on substrate effects of silicon-based RF passive components," in IEEE MTT-S Int. Microwave Symp. Dig., Jun. 1999, pp. 1625-1628.
28. J. Kirchgessner, S. Bigelow, F. K. Chai, R. Cross, P. Dahl, A. Duvallet, B. Gardner, M. Griswold, D. Hammock, J. Heddleson, S. Hildreth, A. Irudayam, C. Lesher, S. Meixner, P. Meng, M. Menner, J. McGinley, D. Monk, D. Morgan, H. Rueda, C. Small, S. Stewart, M. Ting, I. To, P. Welch, T. Zirkle, and W. Huang, "A 0.18 μm SiGe : C RF BiCMOS technology for wireless and gigabit optical communication applications," in Proc. Bipolar/BiCMOS Circuits and Technology Meeting, Sep. 2001, pp. 151-151.
29. J. Browne, "On-wafer probes test silicon IC's to 110 GHz," Microwaves RF, no. 4, pp. 84-90, Apr. 2003.
30. Y. K. Koutsoyannopoulos and Y. Papananos, "Systematic analysis and modeling of integrated inductors and transformers in RF IC design," IEEE Trans. Circuits Syst. II, Analog Digit. Signal Process., vol. 47, no. 8, pp. 699-713, Aug. 2000.
31. R. L. Boylestad, Introductory Circuit Analysis, 9th ed. Upper Saddle River, NJ: Prentice-Hall, 2000, ch. 15, pp. 657-658.