Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster

Solid-State Electronics

Volumn 53, Issue 7, 2009, Pages 717-722

  Ishigaki, T ^a   Tsuchiya, R ^a   Morita, Y ^a   Yoshimoto, H ^a   Sugii, N ^a   Iwamatsu, T ^b   Oda, H ^b   Inoue, Y ^b   Ohtou, T ^c   Hiramoto, T ^c   Kimura, S ^a  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Back gate; Complementary metal oxide semiconductor (CMOS); Fully depleted silicon on insulator (FD SOI); Gate induced drain leakage (GIDL); Leakage; Variation

Indexed keywords

BACK-GATE; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS); FULLY DEPLETED SILICON-ON-INSULATOR (FD-SOI); GATE-INDUCED DRAIN LEAKAGE (GIDL); LEAKAGE; VARIATION;

DIELECTRIC DEVICES; DRAIN CURRENT; FINITE DIFFERENCE METHOD; MICROSENSORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

MOSFET DEVICES;

EID: 67349139148     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.02.008     Document Type: Article

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