OFF-state leakage current mechanisms in BulkSi and SOI MOSFETs and their impact on CMOS ULSIs standby current

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2050-2057

  Adan, Alberto O ^a,b   Higashi, Kenichi ^a,b  

^a IEEE   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Complementary metal oxide semiconductor (CMOS); Floating body (FB) effects; Leakage current; MOS field effect transistors (MOSFETs); Silicon on insulator (SOI); Variable threshold voltage CMOS (VTCMOS)

Indexed keywords

FLOATING BODY EFFECTS; LOGIC INTEGRATED CIRCUITS; VARIABLE THRESHOLD VOLTAGE;

EQUIVALENT CIRCUITS; IONIZATION; LEAKAGE CURRENTS; LOGIC CIRCUITS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; ULSI CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 0035445422     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944195     Document Type: Article

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