Enhanced characteristics in gate-recessed and sidewall-recessed AlGaAs/InGaAs PHEMTs by citric-based selective wet etching

International Journal of Electronics

Volumn 93, Issue 2, 2006, Pages 67-80

  Yarn, K F ^a   Liao, C I ^b  

^a FAR EAST UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Citric buffer etchant; D PHEMTs; E PHEMTs; Gate voltage swing; Gate recessed; Noise figure; Selective etching; Sidewall recessed

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; ETCHING; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

GATE-REPROCESSED; NOISE FIGURE; SELECTIVE ETCHING; SIDEWALL-RECESSED;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 31844453831     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/00207210500409343     Document Type: Article

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