35-nm InP HEMT SMMIC amplifier with 4.4-dB gain at 308 GHz

IEEE Electron Device Letters

Volumn 28, Issue 6, 2007, Pages 470-472

  Mei, X B ^a   Yoshida, W ^a   Deal, W R ^a   Liu, P H ^a   Lee, J ^a   Uyeda, J ^a   Dang, L ^a   Wang, J ^a   Liu, W ^a   Li, D ^a   Barsky, M ^a   Kim, Y M ^a   Lange, M ^a   Chin, T P ^a   Radisic, V ^a   Gaier, T ^b   Fung, A ^b   Samoska, L ^b   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

High frequency; High electron mobility transistor (HEMT); Indium phosphide (InP); Submillimeter wave monolithic microwave integrated circuit (SMMIC) amplifier

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBMILLIMETER WAVES;

SUBMILLIMETER-WAVE MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (SMMIC);

SEMICONDUCTOR OPTICAL AMPLIFIERS;

EID: 34249812665     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.896897     Document Type: Article

References (8)

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