Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications

Semiconductor Science and Technology

Volumn 17, Issue 2, 2002, Pages 156-160

  Tsai, M K ^a   Tan, S W ^b   Wu, Y W ^b   Lour, W S ^b   Yang, Y J ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC INVERTERS; ELECTRIC POWER SUPPLIES TO APPARATUS; ETCHING; GATES (TRANSISTOR); LOGIC CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DEPLETION MODE; ENHANCEMENT MODE; FIELD EFFECT TRANSISTOR LOGIC CIRCUIT; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036471750     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/2/312     Document Type: Article

References (8)

1. Breakdown quenching in high electron mobility transistor by using body contact
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3. 60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT
4. 0.2μm-gate length N-InGaP/InGaAs HEMT DCFL circuit with lower power dissipation than high-speed Si CMOS circuits
5. Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors
6. Direct coupled FET logic (DCFL) circuit for GaAs LSIC application
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8. 0.85 As pseudomorphic transistors