A high-power W-band pseudomorphic InGaAs channel PHEMT

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 533-534

  Gaquiere, C ^a   Grunenputt J ^b   Jambon, D ^a   Delos, E ^a   Ducatteau, D ^a   Werquin, M ^a   Theron D ^a   Fellon, P ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b United Monolithic Semiconductors GmbH   (Germany)

Author keywords

Compound semiconductor; High electron mobility transistors (HEMTs); InGaAs; Microwave; Power; Pseudomorphic; W band

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

COMPOUND SEMICONDUCTOR; POWER MICROWAVE MEASUREMENTS; PSEUDOMORPHIC HEMT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23844513731     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.852520     Document Type: Article

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