High uniformity (Al0.3Ga0.7)0.5In 0.5P/InGaAs enhancement-mode pseudomorphic HEMTs by selective succinic acid gate recess

Electrochemical and Solid-State Letters

Volumn 9, Issue 2, 2006, Pages

  Chiu, Hsien Chin ^a   Cheng, Chia Shih ^a   Shih, Yuan Jui ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; ETCHING; HYDROGEN PEROXIDE; MICROWAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SOLUTIONS; THRESHOLD VOLTAGE;

MICROWAVE POWER DEVICES; POWER DENSITY; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (E-MODE PHEMT); SCHOTTKY LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33645509157     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2151168     Document Type: Article

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