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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 3, 2003, Pages 981-983

Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage

(4) Li, Yih Juan a Hsu, Wei Chou a Chen, Yen Wei a Shieh, Hir Ming a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ETCHING; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

SCHOTTKY LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038457138 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.156835410.1116/1.1568354 Document Type: Article

Times cited : (9)

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