Dual-gate E/E- and E/D-Mode AlGaAs/InGaAs pHEMTs for microwave circuit applications

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1818-1824

  Lin, Dong Ming ^a   Lin, Cheng Kuo ^b   Huang, Fan Hsiu ^b   Wu, Jia Shyan ^b   Wang, Wen Kai ^b   Tsai, Yu Yi ^a   Chan, Yi Jen ^a   Wang, Yu Chi ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b WIN SEMICONDUCTORS CORP   (Taiwan)

Author keywords

AlGaAs InGaAs; Dual gate; Enhancement; pHEMTs; Power amplifiers

Indexed keywords

DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

ENHANCEMENT/DEPLETION-MODE (E/D-MODE); GATE-TO-DRAIN CAPACITANCE; MAXIMUM OSCILLATION FREQUENCY;

MICROWAVE CIRCUITS;

EID: 34547921976     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901054     Document Type: Article

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