Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 103-107

  Lelievre J F ^a   De la Torre, J ^a   Kaminski, A ^a   Bremond, G ^a   Lemiti, M ^a   El Bouayadi, Rachid ^b   Araujo, Daniel ^b   Epicier, Thierry ^b   Monna, R ^c   Pirot, M ^c   Ribeyron, P J ^c   Jaussaud, C ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ DE LYON   (France)

^c CEA GRENOBLE   (France)

Author keywords

Optical constants; Silicon nitride; Silicon quantum dots

Indexed keywords

NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE; SILICON SOLAR CELLS; STOICHIOMETRY;

EMISSION INTENSITY; OPTICAL CONSTANTS; OPTICAL GAP; RADIATIVE RECOMBINATION MECHANISM; SILICON QUANTUM DOTS;

THIN FILMS;

EID: 33747448877     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.136     Document Type: Article

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