A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers

IEEE Transactions on Power Electronics

Volumn 13, Issue 5, 1998, Pages 924-931

  Winterhalter, C ^b   Pendharkar, S ^c   Shenai, Krishna ^a,d  

^a IEEE   (United States)

^b University of Wisconsin Madison   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d 1120 Science and Engineering Offices   (United States)

Author keywords

GaAs; Reverse recovery; Schottky rectifier

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE;

REVERSE RECOVERY; SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0032163588     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.712311     Document Type: Article

References (15)

1. N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995.
2. I. Somos and D. Picone, The P.S. Method. Cardinal, 1980.
3. K. Mayaram, B. Tien, C. Hu, and D. Pederson, "Simulation and modeling for soft recovery of P-i-N rectifiers," in IEEE Int. Electron Devices Meet. Dig., 1988, pp. 622-625.
4. C. W. Lee and S. B. Park, "Design of a thyristor snubber circuit by considering the reverse recovery process," IEEE Trans. Power Electron., vol. 3, no. 4, 1988, pp. 440-446.
5. E. I. Carroll and R. S. Chokhawala, "A snubber design tool for PN junction reverse recovery using a more accurate simulation of the reverse recovery waveform," in Dig. Annu. Industry Applications Soc. Meet., 1989, pp. 1307-1318.
6. ATLAS Users Manual, Silvaco International, Santa Clara, CA.
7. K. Shenai, "Mixed-mode circuit simulation: An emerging CAD tool for the design and optimization of power semiconductor devices and circuits," in Proc. IEEE 1994 PELS Workshop on Computers in Power Electronics, Aug. 7-10, 1994, pp. 11-15.
8. Rectifier Applications Handbook, 3rd ed. Motorola, Inc., 1993.
9. J. Catt, "An improved method for ultra-fast recovery diode testing," in APEC, 1994, pp. 473-479.
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
11. C. Y. Chang and S. M. Sze, "Carrier transport across metal-semiconductor barriers," Solid State Electronic, vol. 13, pp. 727-740, 1970.
12. K. Shenai and R. W. Dutton, "Carrier transport mechanisms in atomically abrupt metal-semiconductor interfaces," IEEE Trans. Electron Devices, vol. 35, no. 4, pp. 468-482, 1988.
13. S. J. Anderson, B. Almesfer, and L. V. Munukutla, "Conduction and switching characteristics of III-V Schottky rectifiers for low loss switching," in APEC, 1992, pp. 433-438.
14. SABER - A Behavioral Circuit Simulator, Analogy, Inc., Beaverton, OR.
15. S. Pendharkar, C. Winterhalter, and K. Shenai, "A behavioral circuit simulation model for high-power GaAs Schottky diodes," IEEE Trans. Electron Devices, vol. 42, no. 10, pp. 1847-1854, 1995.