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Volumn 254, Issue 1 SPEC. ISS., 2007, Pages 316-320
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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge 2 Sb 2 Te 5 chalcogenide thin films
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Author keywords
Ge 2 Sb 2 Te 5 (GST); Nonvolatile memory; PRAM; Reliability; TEM
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Indexed keywords
NANOTECHNOLOGY;
NONVOLATILE STORAGE;
OXIDATION;
RELIABILITY;
SIGNAL ANALYSIS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY SPECTROSCOPY;
ABNORMAL SEGREGATIONS;
NANOSCALE OBSERVATIONS;
NONVOLATILE MEMORY DEVICES;
STABLE COMPOSITIONS;
THIN FILMS;
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EID: 35148814078
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2007.07.098 Document Type: Article |
Times cited : (51)
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References (10)
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