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Volumn 254, Issue 1 SPEC. ISS., 2007, Pages 316-320

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge 2 Sb 2 Te 5 chalcogenide thin films

Author keywords

Ge 2 Sb 2 Te 5 (GST); Nonvolatile memory; PRAM; Reliability; TEM

Indexed keywords

NANOTECHNOLOGY; NONVOLATILE STORAGE; OXIDATION; RELIABILITY; SIGNAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

EID: 35148814078     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.07.098     Document Type: Article
Times cited : (51)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.