Electrical characteristics of ultra-thin gate oxides (< 3 nm) prepared by direct current superimposed with alternating-current anodization

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 23-28

  Chen, Zhi Hao ^a   Huang, Szu Wei ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Anodic oxidation; SILC; TDDB; TZDB; Ultra thin gate oxide

Indexed keywords

ANODIC OXIDATION; LEAKAGE CURRENTS; SILICA; SWITCHING;

CHARGE TRAPPING;

MOSFET DEVICES;

EID: 0142216375     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00257-0     Document Type: Article

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