20nm gate bulk-FinFET SONOS flash

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 154-157

  Hwang, Jiunn Ren ^a   Lee, Tsung Lin ^a   Ma, Huan Chi ^b   Lee, Tzyh Cheang ^a   Chung, Tang Hsuan ^a   Chang, Chang Yun ^a   Liu, Sheng Da ^a   Perng, Baw Ching ^a   Hsu, Ju Wang ^a   Lee, Ming Yong ^a   Ting, Chih Yuan ^a   Huang, Chien Chao ^a   Wang, Ji Hua ^a   Shieh, Jyu Horng ^a   Yang, Fu Liang ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); SILICA;

BULK SILICON SUBSTRATE; FLASH CELLS; MULTI LEVEL STORAGE; ROOM TEMPERATURE;

FLASH MEMORY;

EID: 33847766179     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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