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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 3, 2008, Pages 1182-1186

Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric

(9) Shahrjerdi, D a Nuntawong, N b Balakrishnan, G b Garcia Gutierrez, D I c Khoshakhlagh, A b Tutuc, E a Huffaker, D b Lee, J C a Banerjee, S K a

a The University of Texas at Austin (United States)

b UNIVERSITY OF NEW MEXICO (United States)

c Advanced Technology Development Facility (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; SEMICONDUCTING GALLIUM; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CROSS-SECTIONAL TEM ANALYSIS; INTERFACIAL SELF-CLEANING; SULFUR TREATMENT; THREADING DISLOCATIONS;

MOS CAPACITORS;

EID: 44649178533 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2835061 Document Type: Article

Times cited : (3)

References (16)

1
- 0004245602
- update
- International Technology Roadmap for Semiconductors, 2004 update.
- (2004) International Technology Roadmafor Semiconductors

2
- 33748327432
- TDIMD5 0163-1918.
- D. Q. Kelly, J. P. Donnelly, S. V. Joshi, S. Dey, D. I. García-Gutírrez, M. Joś-Yacamán, and S. K. Banerjee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2005, 923.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 923
- Kelly, D.Q.¹ Donnelly, J.P.² Joshi, S.V.³ Dey, S.⁴ García-Gutírrez, D.I.⁵ Joś-Yacamán, M.⁶ Banerjee, S.K.⁷

3
- 0142115725
- W. P. Bai, Tech. Dig. VLSI Symp. 2003, 121.
- Tech. Dig. VLSI Symp. , vol.2003 , pp. 121
- Bai, W.P.¹

4
- 30844441641
- APPLAB 0003-6951 10.1063/1.2164327.
- S. Koveshnikov, W. Tsai, I. Ok, J. C. Lee, V. Torkanov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2164327 88, 022106 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 022106
- Koveshnikov, S.¹ Tsai, W.² Ok, I.³ Lee, J.C.⁴ Torkanov, V.⁵ Yakimov, M.⁶ Oktyabrsky, S.⁷

5
- 33746602758
- APPLAB 0003-6951 10.1063/1.2234837.
- D. Shahrjerdi, M. M. Oye, A. L. Holmes, Jr., and S. K. Banerjee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2234837 89, 043501 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 043501
- Shahrjerdi, D.¹ Oye, M.M.² Holmes Jr., A.L.³ Banerjee, S.K.⁴

6
- 33644622089
- EDLEDZ 0741-3106 10.1109/LED.2006.870243.
- I. Ok, H. Kim, M. Zhang, C. Kang, S. J. Rhee, C. Choi, S. A. Krishnan, T. Lee, F. Zhu, G. Thareja, and J. C. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.870243 27, 145 (2006).
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 145
- Ok, I.¹ Kim, H.² Zhang, M.³ Kang, C.⁴ Rhee, S.J.⁵ Choi, C.⁶ Krishnan, S.A.⁷ Lee, T.⁸ Zhu, F.⁹ Thareja, G.¹⁰ Lee, J.C.¹¹

7
- 27144499264
- EDLEDZ 0741-3106 10.1109/LED.2005.856707.
- M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, R. Gregory, and D. Nguyen, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2005.856707 26, 713 (2005).
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 713
- Passlack, M.¹ Droopad, R.² Rajagopalan, K.³ Abrokwah, J.⁴ Gregory, R.⁵ Nguyen, D.⁶

8
- 33847404778
- EDLEDZ 0741-3106 10.1109/LED.2006.886319.
- K. Rajagopalan, J. Abrokwah, R. Droopad, and M. Passlack, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.886319 27, 959 (2006).
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 959
- Rajagopalan, K.¹ Abrokwah, J.² Droopad, R.³ Passlack, M.⁴

9
- 34547285895
- APPLAB 0003-6951 10.1063/1.2749840.
- F. Gao, S. J. Lee, D. Z. Chi, S. Balakumar, and D.-L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2749840 90, 252904 (2007).
- (2007) Appl. Phys. Lett. , vol.90 , pp. 252904
- Gao, F.¹ Lee, S.J.² Chi, D.Z.³ Balakumar, S.⁴ Kwong, D.-L.⁵

10
- 33745610211
- APPLAB 0003-6951 10.1063/1.2217258.
- Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2217258 88, 263518 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 263518
- Xuan, Y.¹ Lin, H.C.² Ye, P.D.³ Wilk, G.D.⁴

11
- 29144509765
- APPLAB 0003-6951 10.1063/1.2146060.
- M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu, and M. Hong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2146060 87, 252104 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 252104
- Huang, M.L.¹ Chang, Y.C.² Chang, C.H.³ Lee, Y.J.⁴ Chang, P.⁵ Kwo, J.⁶ Wu, T.B.⁷ Hong, M.⁸

12
- 0000015076
- JAPIAU 0021-8979 10.1063/1.335687.
- R. Fischer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.335687 58, 374 (1985).
- (1985) J. Appl. Phys. , vol.58 , pp. 374
- Fischer, R.¹

13
- 33847006626
- ECSTF8 10.1149/1.2355853.
- E. A. Fitzgerald, C. L. Dohrman, K. Chilukuri, and M. J. Mori, ECS Trans. ECSTF8 10.1149/1.2355853 3, 561 (2006).
- (2006) ECS Trans. , vol.3 , pp. 561
- Fitzgerald, E.A.¹ Dohrman, C.L.² Chilukuri, K.³ Mori, M.J.⁴

14
- 33748714132
- JECMA5 0361-5235 10.1007/s11664-006-0205-y.
- S. Dey, S. Joshi, D. Garcia-Gutierrez, M. Chaumont, A. Campion, M. Jose-Yacaman, and S. K. Banerjee, J. Electron. Mater. JECMA5 0361-5235 10.1007/s11664-006-0205-y 35, 1607 (2006).
- (2006) J. Electron. Mater. , vol.35 , pp. 1607
- Dey, S.¹ Joshi, S.² Garcia-Gutierrez, D.³ Chaumont, M.⁴ Campion, A.⁵ Jose-Yacaman, M.⁶ Banerjee, S.K.⁷

15
- 20844440321
- APPLAB 0003-6951 10.1063/1.1899745.
- M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1899745 86, 152904 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 152904
- Frank, M.M.¹ Wilk, G.D.² Starodub, D.³ Gustafsson, T.⁴ Garfunkel, E.⁵ Chabal, Y.J.⁶ Grazul, J.⁷ Muller, D.A.⁸

16
- 34547850672
- APPLAB 0003-6951 10.1063/1.2764438.
- D. Shahrjerdi, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2764438 91, 063501 (2007).
- (2007) Appl. Phys. Lett. , vol.91 , pp. 063501
- Shahrjerdi, D.¹ Tutuc, E.² Banerjee, S.K.³

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