Measuring terminal capacitance and its voltage dependency for high-voltage power devices

IEEE Transactions on Power Electronics

Volumn 24, Issue 6, 2009, Pages 1486-1493

  Funaki, Tsuyoshi ^a   Phankong, Nathabhat ^b,c   Kimoto, Tsunenobu ^b   Hikihara, Takashi ^d  

^a OSAKA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c RAJAMANGALA UNIVERSITY OF TECHNOLOGY THANYABURI   (Thailand)

^d Graduate School of Engineering   (Japan)

Author keywords

C V characteristics; High voltage power device; Terminal capacitance; Voltage dependency

Indexed keywords

APPLIED VOLTAGES; BIAS-VOLTAGE REGIONS; C-V CHARACTERISTIC; C-V CHARACTERISTICS; C-V CHARACTERIZATION; CAPACITANCE CHANGE; DEPLETION REGION; DEVICE CHARACTERISTICS; DEVICE STRUCTURES; DIFFERENTIAL CAPACITANCE; DISCHARGE PHENOMENA; DRIFT REGIONS; DYNAMIC BEHAVIORS; GATE BIAS VOLTAGE; GATE DRAIN; HIGH-POWER DEVICES; HIGH-VOLTAGE; HIGH-VOLTAGE POWER DEVICE; MEASUREMENT RESULTS; MOS-FET; POWER DEVICES; POWER TRANSISTORS; REVERSE TRANSFER CAPACITANCE; SWITCHING BEHAVIORS; SWITCHING OPERATIONS; TERMINAL CAPACITANCE; TRANSISTOR CAPACITANCE; VOLTAGE DEPENDENCY;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC EQUIPMENT; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

CAPACITANCE;

EID: 66749090340     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2016566     Document Type: Article

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