Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors

IEEE Transactions on Power Electronics

Volumn 17, Issue 6, 2002, Pages 1073-1079

  Shah, Pankaj B ^a   Geil, Bruce R ^a   Griffin, Timothy E ^a   Bayne, Stephen B ^a   Jones, Kenneth A ^a   Oldham, Timothy ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Power semiconductor devices; Power semiconductor switches; Semiconductor device modeling; Semiconductor device reliability; Thyristors

Indexed keywords

ANODES; CATHODES; COMPUTER SIMULATION; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC POWER SUPPLIES TO APPARATUS; IMPACT IONIZATION; POWER ELECTRONICS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

HIGH POWER SWITCHING; POWER SEMICONDUCTOR DEVICE; RESISTIVE LOAD CIRCUIT; SILICON CARBIDE GATE TURN-OFF THYRISTOR;

THYRISTORS;

EID: 0036876059     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2002.805591     Document Type: Article

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