Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET

IEICE Electronics Express

Volumn 4, Issue 16, 2007, Pages 517-523

  Funaki, Tsuyoshi ^a   Kimoto, Tsunenobu ^a   Hikihara, Takashi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

C V characteristics; Device structure; High voltage; JFET; SiC

Indexed keywords

EID: 35348900134     PISSN: None     EISSN: 13492543     Source Type: Journal    
DOI: 10.1587/elex.4.517     Document Type: Article

References (8)

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