Accurate behavioural modelling of power MOSFETs based on device measurements and FE-simulations

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Elferich, Reinhold ^a   Lopez, Toni ^a   Koper, Nick ^b  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Device characterisation; Device modelling; Discrete power device; High frequency power converter; MOSFET; Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MOSFET DEVICES; OPTIMIZATION; POWER CONVERTERS; TABLE LOOKUP;

DEVICE CHARACTERISATION; DEVICE MODELING; DISCRETE POWER DEVICE; FITTING FUNCTIONS; HIGH FREQUENCY POWER CONVERTER;

POWER ELECTRONICS;

EID: 33947658550     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/epe.2005.219640     Document Type: Conference Paper

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