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Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

The influence of point defects and inhomogeneous strain on the functional behavior of thin film ferroelectrics

(3) Chang, L W a McMillen, M a Gregg, J M a

a QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITOR STRUCTURES; DOMAIN-WALL PINNING; FERROELECTRIC PHASE TRANSITION; FUNCTIONAL BEHAVIORS; FUNCTIONAL PROPERTIES; INHOMOGENEOUS STRAIN FIELDS; KEY FEATURE; MEAN FIELD MODELING; PARAELECTRIC; SECOND ORDERS; SINGLE CRYSTAL THIN FILMS; SWITCHING CHARACTERISTICS; THIN FILM FERROELECTRICS;

BARIUM TITANATE; DEFECTS; OXYGEN; PHASE TRANSITIONS; POINT DEFECTS; SINGLE CRYSTALS; THIN FILM DEVICES; THIN FILMS;

FERROELECTRIC MATERIALS;

EID: 66549098125 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3132583 Document Type: Article

Times cited : (16)

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