Optimization of the tunability of barium strontium titanate films via epitaxial stresses

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 504-511

  Ban, Z G ^a   Alpay, S P ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM TITANATE; DIELECTRIC PROPERTIES; ELECTROMAGNETIC WAVE POLARIZATION; EPITAXIAL GROWTH; LATTICE CONSTANTS; PHASE TRANSITIONS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

TUNABILITY;

FERROELECTRIC THIN FILMS;

EID: 0037250098     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1524310     Document Type: Article

References (51)

1. 3 Thin Films for DRAM's, in Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh (Kluwer Academic, Boston, 1997), p. 1.
2. A.I. Kingon, S. K. Streiffer, C. Basceri, and S. R. Summerfelt, Mater. Res. Bull. 21, 46 (1996).
3. W. Chang, C. M. Gilmore, W.-J. Kim, J. M. Pond, S. W. Kirchoefer, S. B. Qadri, D. B. Chrisey, and J. S. Horwitz, J. Appl. Phys. 87, 3044 (2000).
4. J. Im, O. Auciello, P. K. Baumann, S. K. Streiffer, D. Y. Kaufman, and A. R. Krauss, Appl. Phys. Lett. 76, 625 (2000).
5. C. L. Chen et al., Appl. Phys. Lett. 78, 652 (2001).
6. H.-D. Wu, Z. Zhang, F. Barnes, C. M. Jackson, A. Kain, and J. D. Cuchiaro, IEEE Trans. Appl. Supercond. 4, 156 (1994).
7. T. M. Shaw, S. Trolier-McKinstry, and P. C. McIntyre, Annu. Rev. Mater. Sci. 30, 263 (2000).
8. C. L. Canedy, H. Li, S. P. Alpay, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh, Appl. Phys. Lett. 77, 1695 (2000).
9. H. Li, A. L. Roytburd, S. P. Alpay, T. D. Tran, L. Salamanca-Riba, and R. Ramesh, Appl. Phys. Lett. 78, 2354 (2001).
10. T. M. Shaw, Z. Suo, M. Huang, E. Liniger, R. B. Laibowitz, and J. D. Baniecki, Appl. Phys. Lett. 75, 2129 (1999).
11. L. A. Knauss, J. M. Pond, J. S. Horwitz, D. B. Chrisey, C. H. Mueller, and R. Treece, Appl. Phys. Lett. 69, 25 (1996).
12. C. M. Carlson, T. V. Rivikin, P. A. Parilla, J. D. Perkins, D. S. Ginley, A. B. Kozyrev, V. N. Oshadchy, and A. S. Pavlov, Appl. Phys. Lett. 76, 1920 (2000).
13. N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998).
14. Z.-G. Ban and S. P. Alpay, J. Appl. Phys. 91, 9288 (2002).
15. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, edited by K.-H. Hellwege and A. M. Hellwege (Springer, Berlin, 1981), Vol. 16.
16. N. A. Pertsev, A. K. Tagantsev, and N. Setter, Phys. Rev. B 61, R825 (2000).
17. T. Yamada, J. Appl. Phys. 43, 328 (1972).
18. A. D. Hilton and B. W. Ricketts, J. Phys. D 29, 1321 (1996).
19. M. E. Lines and A. M. Glass, Macroscopic and Phenomenology, in Principles and Applications of Ferroelectrics and Related Materials, edited by W. Marshall and D. H. Wilkinson (Clarendon, Oxford, 1977), p. 59.
20. 3 ≠ 0 (space group R3m, No. 160).
21. E. Fatuzzo and W. J. Merz, in Thermodynamic Theory of Ferroelectrics, in Ferroelectricity, edited by E. P. Wohlfarth (North-Holland, Amsterdam, 1967), p. 141.
22. O. E. Fesenko and V. S. Popov, Ferroelectrics 37, 729 (1981).
23. A. J. Bell and L. E. Cross, Ferroelectrics 59, 197 (1984).
24. B. H. Park, Y. Gim, Y. Fan, Z. X. Jia, and P. Lu, Appl. Phys. Lett. 77, 2587 (2000).
25. K. Abe and S. Komatsu, J. Appl. Phys. 77, 6461 (1995).
26. B. H. Park, E. J. Peterson, Q. X. Jia, J. Lee, W. Si, and X. X. Xi, Appl. Phys. Lett. 78, 533 (2001).
27. F. Jona and G. Shirane, Ferroelectric Crystals (Dover, New York, 1962), p. 21.
28. J. H. van der Merre, J. Appl. Phys. 34, 123 (1963).
29. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
30. W. D. Nix, Metall. Trans. A 20, 2217 (1989).
31. J. S. Speck and W. Pompe, J. Appl. Phys. 76, 466 (1994).
32. S. P. Alpay, V. Nagarajan, A. Bendersky, M. D. Vaudin, S. Aggarwal, R. Ramesh, and A. L. Roytburd, J. Appl. Phys. 85, 3271 (1999).
33. S. P. Alpay and A. L. Roytburd, J. Appl. Phys. 83, 4714 (1998).
34. C. Basceri, S. Streiffer, A. I. Kingon, and R. Waser, J. Appl. Phys. 82, 2497 (1997).
35. J. C. Slonczewski and H. Thomas, Phys. Rev. B 1, 3599 (1970).
36. H. Uwe and T. Sakudo, Phys. Rev. B 13, 271 (1976).
37. N. A. Pertsev, V. G. Konkhar, R. Waser, and S. Hoffmann, Appl. Phys. Lett. 77, 2596 (2000).
38. J. S. Speck, A. C. Daykin, A. Seifert, A. E. Romanov, and W. Pompe, J. Appl. Phys. 78, 1696 (1995).
39. N. A. Pertsev and A. G. Zembilgotov, J. Appl. Phys. 78, 6170 (1995).
40. N. A. Pertsev and A. G. Zemhilgotov, J. Appl. Phys. 80, 6401 (1996).
41. N. Sridhar, J. M. Rickman, and D. J. Srolovitz, Acta Mater. 44, 4085 (1996).
42. N. Sridhar, J. M. Rickman, and D. J. Srolovitz, Acta Mater. 44, 4097 (1996).
43. V. G. Koukhar, N. A. Pertsev, and R. Waser, Phys. Rev. B 64, 214103 (2001).
44. B. S. Kwak, A. Erbil, J. D. Budai, M. F. Chrisholm, L. A. Boatner, and B. J. Wilkens, Phys. Rev. B 49, 14865 (1994).
45. V. G. Koukhar, N. A. Pertsev, and R. Waser, Phys. Rev. B 64, 214103 (2001).
46. L. B. Freund, MRS Bull. 17, 52 (1992).
47. L. B. Freund and W. D. Nix, Appl. Phys. Lett. 69, 173 (1996).
48. D. R. Tilley and B. Žekš, Solid State Commun. 49, 823 (1984).
49. D. R. Zhong, Y. G. Wang, P. L. Zhang, and B. D. Qu, Phys. Rev. B 50, 698 (1994).
50. B. Jiang and L. A. Bursill, Phys. Rev. B 60, 9978 (1999).
51. E. K. Akdogan and A. Safari, J. Appl. Phys. (in press).