A complementary bipolar technology family with a vertically integrated PNP for high-frequency analog applications

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2525-2534

  Bashir, Rashid ^a   Heébert, François ^b   DeSantis, Joseph ^c   McGregor, Joel M ^d   Yindeepol, Wipawan ^c   Brown, Kevin ^e   Moraveji, Farhood ^e   Mills, Thomas B ^c   Sadovnikov, Alexei ^c   McGinty, James ^c   Hopper, Peter ^c   Sabsowitz, Robert ^c   Khidr, Mohamed ^c   Krakowski, Tracey ^c   Smith, Linda ^c   Razouk, Reda ^c  

^a PURDUE UNIVERSITY   (United States)

^b LINEAR TECHNOLOGY CORP   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^d MAXIM INTEGRATED PRODUCTS   (United States)

^e Micrel   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT LAYOUT; MICROELECTRONIC PROCESSING; OPTIMIZATION; PERFORMANCE; POLYCRYSTALLINE MATERIALS; RESISTORS; SEMICONDUCTING SILICON;

BIPOLAR TECHNOLOGY FAMILY; HIGH FREQUENCY ANALOG CIRCUITS; POLCRYSTALLINE SILICON RESISTOR; SILICON EMITTER; VERTICALLY INTEGRATED BIPOLAR JUNCTION TRANSISTOR;

BIPOLAR TRANSISTORS;

EID: 6644230373     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960378     Document Type: Article

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