An NPN 30 GHz, PNP 32 GHz fT Complementary Bipolar Technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 63-66

  Onai, Takahiro ^a   Ohue, Eiji ^a   Idei, Yohji ^a   Tanabe, Masamichi ^a   Shimamoto, Hiromi ^a   Washio, Katsuyoshi ^a   Nakamura, Tohru ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC LOSSES; EPITAXIAL GROWTH; TRANSISTORS; DIFFUSION; LSI CIRCUITS; OXIDATION;

BIPOLAR TECHNOLOGY; BORON DIFFUSIONS; COMPLEMENTARY BIPOLAR; DIFFUSION LAYERS; LOW-POWER DISSIPATION; N-P-N TRANSISTORS; NPN TRANSISTOR; PNP TRANSISTORS; SURFACE CONCENTRATION; ULTRA HIGH SPEED;

CUTOFF FREQUENCY; BIPOLAR TRANSISTORS;

CUTOFF FREQUENCIES; POWER DISSIPATION; SUBCOLLECTOR;

EID: 0027815085     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Y. Idei et al., 1993 Symposium on VLSI Circuits, p. 25, (1993)
2. C. T. Chuang, et al., IEEE. J. Sol. St. Cir. 27, p. 660, (1992)
3. K. Washio et al., 1992 Symposium on VLSI Technology, p. 64, (1992)
4. J. Warnock et al., IEEE. Electron Device Lett. 11, p. 475, (1991)
5. J. Warnock, et al., 1993 Symposium on VLSI Technology, p. 75 (1993)
6. T. Nakamura et al., Proc. of 1991 BCTM, p.11
7. T. Shiba et al., IEDM Tech. Dig. p. 455 (1991)