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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 6 B, 2001, Pages 4292-4298

Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge

(11) Wang, Xue Sen a Li, Zongquan a,b Wang, Lei a,b Hu, Yanfang a,c Zhai, Guangjie a Yang, Jianshu a,c Wang, Yuqi a Fung, Kwok Kwong a Tang, Jing Chang b Wang, Xun c Cue, Nelson a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b ZHEJIANG UNIVERSITY (China)

c FUDAN UNIVERSITY (China)

Author keywords

Germanium; Scanning tunneling microscopy; Semiconductor insulator thin film structures; Silicon; Silicon nitride; Transmission electron microscopy

Indexed keywords

AMORPHOUS FILMS; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; FILM GROWTH; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

OVERLAYER GROWTH;

THIN FILMS;

EID: 6644219771 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4292 Document Type: Article

Times cited : (5)

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