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Volumn 603, Issue 14, 2009, Pages 2188-2192

Evidence for H2 at high pressure in the silicon nanocavities after dipping in HF solution

Author keywords

Adsorption and desorption at high H2 pressure; Hydrogen injection via wet chemistry; MIR infrared spectroscopy; Nanocavities in silicon

Indexed keywords

FLUENCE; HF SOLUTIONS; HIGH PRESSURE; HIGH TEMPERATURE; HYDROGEN INJECTION VIA WET CHEMISTRY; INNER SURFACES; MIR INFRARED SPECTROSCOPY; NANO-CAVITIES; NANOCAVITIES IN SILICON; OUTER SURFACE;

EID: 66249132728     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.04.017     Document Type: Article
Times cited : (9)

References (39)
  • 38
    • 0003864995 scopus 로고
    • Pearton S.J., Corbett J.W., and Stavola M. (Eds), Springer, Berlin
    • In: Pearton S.J., Corbett J.W., and Stavola M. (Eds). Hydrogen in Crystalline Semiconductors (1992), Springer, Berlin
    • (1992) Hydrogen in Crystalline Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.