Band gap and effective electron mass of cubic InN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2342-2344

  Schley, P ^a   Napierala, C ^a   Goldhahn, R ^a   Gobsch, G ^a   Schormann J ^b   As, D J ^b   Lischka, K ^b   Feneberg, M ^c   Thonke, K ^c   Fuchs, F ^d   Bechstedt, F ^d  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF PADERBORN   (Germany)

^c UNIVERSITY OF ULM   (Germany)

^d FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND GAP RENORMALIZATION; BAND GAPS; BRILLOUIN ZONES; BURSTEIN-MOSS SHIFT; COMPLEX DIELECTRIC FUNCTIONS; DATA ANALYSIS; ELECTRON MASS; GAN BUFFER LAYERS; HIGH-ELECTRON-DENSITY; INN FILMS; MIDINFRARED; NON PARABOLICITY; SIC SUBSTRATES; SINGLE-CRYSTALLINE; VISIBLE SPECTRAL REGIONS;

ELECTRON MOBILITY; ENERGY GAP; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; SILICON CARBIDE; SPECTROSCOPIC ELLIPSOMETRY;

ELECTRONS;

EID: 66149187278     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778482     Document Type: Conference Paper

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