FT-IR-ATR study of depth profile of SiO2 ultra-thin films

Applied Surface Science

Volumn 172, Issue 3-4, 2001, Pages 307-311

  Nagai, N ^a   Hashimoto, H ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; ELECTROMAGNETIC WAVE REFLECTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR STRUCTURE; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SURFACE ROUGHNESS; ULTRATHIN FILMS;

ATTENUATED TOTAL REFLECTION (ATR); DEPTH PROFILING; GRAZING INCIDENCE X RAY REFLECTOMETRY (GIXR); LONGITUDINAL OPTICAL (LO) MODES;

SEMICONDUCTING FILMS;

EID: 0034836699     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00867-9     Document Type: Article

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