Model based mask process correction and verification for advanced process nodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7274, Issue , 2009, Pages

  Lin, Timothy ^a   Donnelly, Tom ^a   Schulze, Steffen ^a  

^a MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Etch process; Mask modeling; Mask process correction

Indexed keywords

32-NM NODE; ADVANCED PROCESS; DATA INTEGRITY; ETCH BIAS; ETCH PROCESS; EXPERIMENTAL DATA; IN-PROCESS; LONG RANGE EFFECTS; MASK DATA; MASK MANUFACTURING; MASK MODELING; MASK PROCESS; MASK PROCESS CORRECTION; MODEL VERIFICATION; MODEL-BASED; ON-WAFER; OPERATIONAL EFFICIENCIES; OPTICAL LITHOGRAPHY; OTHER APPLICATIONS; RANGE ERROR; RESIDUAL ERROR; RESOLUTION ENHANCEMENT TECHNIQUE; RUNTIME; RUNTIME PERFORMANCE; SHORT-RANGE EFFECTS; TOLERANCE REQUIREMENT; WAFER LITHOGRAPHY;

ERRORS; MASKS; PHOTOLITHOGRAPHY; SECURITY OF DATA;

MODEL BUILDINGS;

EID: 65849403171     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814362     Document Type: Conference Paper

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