MoSi absorber photomask for 32nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Konishi, Toshio ^a   Kojima, Yosuke ^a   Takahashi, Hiroyuki ^a   Tanabe, Masato ^a   Haraguchi, Takashi ^a   Lamantia, Matthew ^a   Fukushima, Yuichi ^a   Okuda, Yoshimitsu ^a  

^a TOPPAN PRINTING CO LTD   (Japan)

Author keywords

32nm node; Attenuated phase shift mask; Binary mask; Immersion lithography; MoSi absorber

Indexed keywords

CADMIUM; CADMIUM COMPOUNDS; COMPUTER NETWORKS; CRACK DETECTION; CURING; DATA STORAGE EQUIPMENT; DRY ETCHING; DRYING; ELECTRON BEAM LITHOGRAPHY; ETCHING; LOADING; MULTITASKING; NANOTECHNOLOGY; PHOTOACOUSTIC EFFECT; PHOTOMASKS; PLASMA ETCHING; PRINTING; SEMICONDUCTING CADMIUM COMPOUNDS; SPECIFICATIONS; TECHNOLOGY;

(ALGORITHMIC) COMPLEXITY; (I ,J) CONDITIONS; (OTDR) TECHNOLOGY; ABSORBER THICKNESS; CD ERRORS; CD VARIATIONS; CRITICAL DIMENSION (CD) LINEARITY; DOUBLE PATTERNING; DRY-ETCHING PROCESS; EB RESIST; HARD MASKS; IMMERSION LITHOGRAPHY (IML); LOADING EFFECTS; MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); OPTICAL LITHOGRAPHY; PHOTO MASKING; RESIST THICKNESSES; SEMICONDUCTOR PROCESSING; WAFER PRINTING;

CHROMIUM;

EID: 45749099268     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.796010     Document Type: Conference Paper

References (2)

1. T.Mikio, et al. , "Improvement of CD variation control for Attenuated Phase-Shift Mask", Proc.SPIE, Vol.6607, 66070B [6607-10]
2. Y.Kojima, et.al., "Alternating Phase-Shift Mask and Binary Mask for 45-nm Node and Beyond: The Impact on the Mask Error Control", Proc.SPIE,Vol.6607,66070C [6607-11]