Advanced mask process modeling for 45-nm and 32-nm nodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Tejnil, Edita ^a   Yuanfang, Hu ^a   Sahouria, Emile ^a   Schulze, Steffen ^a   Ming, Jing Tian ^b   Guo, Eric ^b  

^a MENTOR GRAPHICS CORPORATION   (United States)

^b SMIC   (China)

Author keywords

Etch process; Mask modeling; Mask process correction

Indexed keywords

(E ,3E) PROCESS; CORRECTION METHODS; CRITICAL DIMENSION (CD); LITHOGRAPHY PROCESSES; LOADING EFFECTS; MASK ERRORS; MASK MANUFACTURING; MASK PROCESSES; MEASUREMENT DATA; MODEL BASED (OPC); NEW TECHNOLOGIES; OPTICAL MICRO LITHOGRAPHY; OPTICAL PROXIMITY CORRECTION (OPC); PATTERN CORRECTION; PATTERN DENSITIES; PHOTO MASKING; PHYSICAL EFFECTS; PROCESS BEHAVIORS; PROCESS COMPONENT (PC); PROXIMITY EFFECTS; RESIST PROCESSING; TARGET VALUE (T); TEST MASKS; WELL ESTABLISHED TECHNIQUES;

CMOS INTEGRATED CIRCUITS; COMPUTER NETWORKS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONIC EQUIPMENT TESTING; INDUSTRIAL ENGINEERING; LOADING; MATHEMATICAL MODELS; PARTICLE BEAMS; PROCESS MONITORING; TECHNOLOGY;

PHOTOACOUSTIC EFFECT;

EID: 45449113750     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772975     Document Type: Conference Paper

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