Fogging and pattern loading effect by writing strategy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 205-216

  Cho, J S ^a   Baek, S H ^a   Nam, K H ^a   Cho, H J ^a   Daniel, Courboin ^a   Jeong, S H ^a   Lee, I S ^a   Shin, C ^a   Kim, H S ^a  

^a DUPONT COMPANY   (United States)

Author keywords

50 kV E beam system; Chemically amplified resist; Contrast ( ) value; Dose latitude; Fogging effect; Fogging effect correction; Loading effect; Pattern density; Proximity effect correction

Indexed keywords

DRY ETCHING; ELECTRON BEAMS; PHOTORESISTS; VECTORS;

FOGGING EFFECT; PATTERN LOADING;

MASKS;

EID: 0036456832     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.476943     Document Type: Article

References (3)

1. N. Takahashi. et al., "Performance of JBX-9000MV with negative tone resist for 130 nm recticle", SPIE Vol. 4186, pp 22-33, 2000
2. J.-Y. Lee. et al., "Analysis of dry etch loading effect in mask fabrication" SPIE Vol. 4562, pp 609 - 615, 2001.
3. P. Rai-Choudhury, "Hand book of Microlithography, Micromachining and Microfabrication" Vol, pp 139-251, 1997.