Proximity effect correction for electron beam lithography: Highly accurate correction method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7546-7551

  Kamikubo, Takashi ^a   Abe, Takayuki ^a   Oogi, Susumu ^a   Anze, Hiroto ^a   Shimizu, Mitsuko ^a   Itoh, Masamitsu ^a   Nakasugi, Tetsuro ^a   Takigawa, Tadahiro ^a   Iijima, Tomohiro ^b   Hattori, Yoshiaki ^b   Tojo, Toru ^b  

^a TOSHIBA CORPORATION   (Japan)

^b Toshiba Machine Co Ltd   (Japan)

Author keywords

1 Gbit DRAMs; Back scattered electrons; Dimensional accuracy; Electron beam; Proximity effect correction; Reticles

Indexed keywords

ERROR ANALYSIS; ERROR CORRECTION; RANDOM ACCESS STORAGE;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); PROXIMITY EFFECT CORRECTION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031382384     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7546     Document Type: Article

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