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Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 341-346

Incorporation of carbon on a (1 1̄ 0 1) facet of GaN by MOVPE

(5) Koide, Norikatsu a Hikosaka, Toshiki a Honda, Yoshio a Yamaguchi, Masahito a Sawaki, Nobuhiko a

a NAGOYA UNIVERSITY (Japan)

Author keywords

A1. Carbon doping; A3. MOVPE; A3. Selective epitaxy; B1. GaN

Indexed keywords

CARBON; CATHODOLUMINESCENCE; DOPING (ADDITIVES); METALLORGANIC VAPOR PHASE EPITAXY; SPECTROSCOPY; STRESS ANALYSIS; SUBSTRATES;

ACCEPTOR BOUND EXCITON (ABE); CARBON DOPING; GAN; SELECTIVE EPITAXY;

GALLIUM NITRIDE;

EID: 26044458491 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.07.021 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.