Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: An ab initio study

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 15, 2009, Pages

  Abu Farsakh, Hazem ^a   Neugebauer, Jörg ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65649115775     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.155311     Document Type: Article

References (46)

1. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 2 31, L853 (1992). 10.1143/JJAP.31.L853
2. J. Neugebauer and C. G. Van de Walle, Phys. Rev. B 51, 10568 (1995). 10.1103/PhysRevB.51.10568
3. S.-H. Wei and A. Zunger, Phys. Rev. Lett. 76, 664 (1996). 10.1103/PhysRevLett.76.664
4. I. hsiu Ho and G. Stringfellow, J. Cryst. Growth 178, 1 (1997). 10.1016/S0022-0248(97)00078-X
5. J. Tersoff, Phys. Rev. Lett. 74, 5080 (1995). 10.1103/PhysRevLett.74.5080
6. S. B. Zhang and A. Zunger, Appl. Phys. Lett. 71, 677 (1997). 10.1063/1.119827
7. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996). 10.1143/JJAP.35.1273
8. S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, Appl. Phys. Lett. 74, 729 (1999). 10.1063/1.123105
9. K. Volz, D. Lackner, I. Nemeth, B. Kunert, W. Stolz, C. Baur, F. Dimroth, and A. W. Bett, J. Cryst. Growth 310, 2222 (2008). 10.1016/j.jcrysgro.2007.11. 199
10. D. K. Shih, H. H. Lin, and Y. H. Lin, Electron. Lett. 37, 1342 (2001). 10.1049/el:20010894
11. V. Sallet, L. Largeau, O. Mauguin, L. Travers, and J. C. Harmand, Phys. Status Solidi B 242, R43 (2005). 10.1002/pssb.200510013 (Pubitemid 40669479)
12. J.-M. Chauveau, A. Trampert, K. H. Ploog, and E. Tournie, Appl. Phys. Lett. 84, 2503 (2004). 10.1063/1.1690108
13. X. Kong, A. Trampert, E. Tournié, and K. H. Ploog, Appl. Phys. Lett. 87, 171901 (2005). 10.1063/1.2108108
14. D. Litvinov, D. Gerthsen, A. Rosenauer, M. Hetterich, A. Grau, P. Gilet, and L. Grenouillet, Appl. Phys. Lett. 85, 3743 (2004). 10.1063/1.1810643
15. M. Albrecht, H. Abu-Farsakh, T. Remmele, I. Hausler, L. Geelhaar, H. Riechert, R. Fornari, and J. Neugebauer, Phys. Rev. Lett. 99, 206103 (2007). 10.1103/PhysRevLett.99.206103 (Pubitemid 350127383)
16. www.sphinxlib.de
17. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
18. L. Kleinman and D. M. Bylander, Phys. Rev. Lett. 48, 1425 (1982). 10.1103/PhysRevLett.48.1425
19. N. Troullier and J. L. Martins, Phys. Rev. B 43, 1993 (1991). 10.1103/PhysRevB.43.1993
20. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
21. W. A. Harrison, Electronic Structure and the Properties of Solids (Dover, New York, 1989).
22. The error is larger for some high-energy substitutional sites (the largest error is 0.23 eV). Nevertheless this does not affect the calculation of N solubility since due to their high energy the occupation of these sites at realistic growth conditions turns out to be negligible.
23. CRC Handbook Of Chemistry and Physics, 86th ed., edited by, D. R. Lide, (CRC, Boca Raton, FL, 2005).
24. M. Fuchs, J. L. F. Da Silva, C. Stampfl, J. Neugebauer, and M. Scheffler, Phys. Rev. B 65, 245212 (2002). 10.1103/PhysRevB.65.245212
25. M. R. Ranade, F. Tessier, A. Navrotsky, and R. Marchand, J. Mater. Res. 16, 2824 (2001). 10.1557/JMR.2001.0389
26. P. Laukkanen, Phys. Rev. Lett. 100, 086101 (2008). 10.1103/PhysRevLett. 100.086101
27. P. Laukkanen, M. Ahola-Tuomi, M. Kuzmin, R. E. Perala, I. J. Vayrynen, A. Tukiainen, J. Pakarinen, M. Saarinen, and M. Pessa, Appl. Phys. Lett. 90, 082101 (2007). 10.1063/1.2560954 (Pubitemid 46310362)
28. S. Z. Wang, S. F. Yoon, and W. K. Loke, J. Appl. Phys. 94, 2662 (2003). 10.1063/1.1591413
29. A. R. Kovsh, J. S. Wang, L. Wei, R. S. Shiao, J. Y. Chi, B. V. Volovik, A. F. Tsatsul'nikov, and V. M. Ustinov, J. Vac. Sci. Technol. B 20, 1158 (2002). 10.1116/1.1473176 (Pubitemid 34751311)
30. S. H. Lee, W. Moritz, and M. Scheffler, Phys. Rev. Lett. 85, 3890 (2000). 10.1103/PhysRevLett.85.3890
31. W. G. Schmidt, Appl. Phys. A: Mater. Sci. Process. 75, 89 (2002). 10.1007/s003390101058 (Pubitemid 34544203)
32. A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch, Phys. Status Solidi B 242, 2820 (2005). 10.1002/pssb.200440099 (Pubitemid 41693339)
33. S. B. Zhang and S.-H. Wei, Phys. Rev. Lett. 86, 1789 (2001). 10.1103/PhysRevLett.86.1789
34. T. Hashizume, Q. K. Xue, J. Zhou, A. Ichimiya, and T. Sakurai, Phys. Rev. Lett. 73, 2208 (1994). 10.1103/PhysRevLett.73.2208
35. R. Z. Bakhtizin, T. Sakurai, Q. K. Xue, and T. Hashizume, Phys. Usp. 167, 1227 (1997). 10.3367/UFNr.0167.199711f.1227
36. W. G. Schmidt, Appl. Phys. A: Mater. Sci. Process. 65, 581 (1997). 10.1007/s003390050625
37. M. Itoh and T. Ohno, Phys. Rev. B 62, 7219 (2000). 10.1103/PhysRevB.62. 7219
38. H. Abu-Farsakh and J. Neugebauer (unpublished).
39. J. S. Wang, A. R. Kovsh, L. Wei, J. Y. Chi, Y. T. Wu, P. Y. Wang, and V. M. Ustinov, Nanotechnology 12, 430 (2001). 10.1088/0957-4484/12/4/308 (Pubitemid 34047140)
40. Q. X. Zhao, S. M. Wang, M. Sadeghi, A. Larsson, M. Friesel, and M. Willander, Appl. Phys. Lett. 89, 031907 (2006). 10.1063/1.2219133 (Pubitemid 44107035)
41. W. G. Bi and C. W. Tu, Appl. Phys. Lett. 70, 1608 (1997). 10.1063/1.118630
42. H. Carrere, A. Arnoult, A. Ricard, X. Marie, T. Amand, and E. Bedel-Pereira, Solid-State Electron. 47, 419 (2003). 10.1016/S0038-1101(02) 00382-9
43. T. D. Veal, L. F. J. Piper, P. H. Jefferson, I. Mahboob, C. F. McConville, M. Merrick, T. J. C. Hosea, B. N. Murdin, and M. Hopkinson, Appl. Phys. Lett. 87, 182114 (2005). 10.1063/1.2126117
44. S. Nishio, A. Nishikawa, R. Katayama, K. Onabe, and Y. Shiraki, J. Cryst. Growth 251, 422 (2003). 10.1016/S0022-0248(02)02220-0
45. Q. Zhuang, A. Godenir, and A. Krier, J. Phys. D 41, 132002 (2008). 10.1088/0022-3727/41/13/132002
46. J. Wagner, K. Kohler, P. Ganser, and M. Maier, Appl. Phys. Lett. 87, 051913 (2005). 10.1063/1.2005389