Bonding of nitrogen in dilute InAsN and high In-content GaInAsN

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Wagner, J ^a,b   Kohler K ^a   Ganser, P ^a   Maier, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; MOLECULAR BEAM EPITAXY; NITROGEN; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS;

DILUTE INASN; GAINASN; INTERBAND TRANSITIONS; NITROGEN CONTENT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33645528017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2005389     Document Type: Article

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