Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

Journal of Physics D: Applied Physics

Volumn 41, Issue 13, 2008, Pages

  Zhuang, Q ^a   Godenir, A ^a   Krier, A ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AIR POLLUTION; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; EPILAYERS; EPITAXIAL GROWTH; LASER EXCITATION; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITROGEN; NONMETALS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

BAND GAP ENERGIES; BAND TRANSITIONS; DIRECT OBSERVATION; DOUBLE PEAKS; EPILAYERS GROWN; EXCITATION POWERS; HIGH QUALITY (HQ); INTENSE (CO); LOCALIZED STATES; LONG-WAVELENGTH EMISSIONS; LOW TEMPERATURE (LTR); NITROGEN COMPOSITIONS; NITROGEN INCORPORATION; PHOTOLUMINESCENCE (PL) EMISSIONS; PHOTOLUMINESCENCE (PL) SPECTROSCOPY; ROOM-TEMPERATURE (RT); SHORT WAVELENGTH (SW); TIME-RESOLVED PHOTOLUMINESCENCE (PL) SPECTRA;

MOLECULAR BEAM EPITAXY;

EID: 48249095537     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/13/132002     Document Type: Article

References (18)

1. Kondow M, Uomi K, Hosomi K and Mozume T 1994 Japan. J. Appl. Phys. Part 2 33 L1056
2. Shan W et al 1998 Phys. Rev. Lett. 82 1221
3. Balkan N 2004 The physics and technology of dilute nitrides J. Phys. Condens. Matter 16 (issue 31) (ed) preface to special issue, doi:10.1088/0953-8984/16/31/K01
4. Henini M 2005 Dilute Nitride Semiconductors (Amsterdam: Elsevier) ISBN: 0080445020
5. Nelson Tansu, Jeng-Ya Yeh and Luke Mawst 2003 J. Appl. Phys. Lett. 83 2512
6. Niu Z C et al 2005 Appl. Phys. Lett. 87 231121
7. Osinski M 2003 Opto-electron. Rev. 11 321
8. Shih D K, Lin H H and Lin Y H 2001 Electron. Lett. 37 1342
9. Wagner J, Kohler K, Ganser P and Maier M 2005 Appl. Phys. Lett. 87 051913
10. Zhuang Q, Godenir A M R, Krier A, Lai K T and Haywood S K 2008 J. Appl. Phys. 103 063520
11. Buyanova I A, Chen W M, Pozina G, Bergman J P, Monemar B, Xin H P and Tu C W 1999 Appl. Phys. Lett. 75 501
12. Sun B Q, Gal M, Cao Q, Tan H H and Jagadish C 2002 Appl. Phys. Lett. 81
13. Polimen A, Capizzi M, Geddo M, Fischer M, Reinhardt M and Forchel A 2000 Appl. Phys. Lett. 77 2870
14. Sun H D, Clark A H, Liu H Y, Hopkinson M, Calvez S, Dawson M D, Qiu Y N and Rorison J M 2004 Appl. Phys. Lett. 85 4013
15. Veal T D, Piper L F J, Jefferson P H, Mahboob I, McConville C F, Merrick M, Hosea T J C, Murdin B N and Hopkinson M 2005 Appl. Phys. Lett. 87 182114
16. Fan J C, Hung W K, Chen Y F, Wang J S and Lin H H 2000 Phys. Rev. 62 10990
17. Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
18. Shih D K, Lin H H, Sung L W, Chu T Y and Yang T R 2003 Japan. J. Appl. Phys. 42 375