(4x2) and (2x4) reconstructions of GaAs and InP(001) surfaces

Applied Physics A: Materials Science and Processing

Volumn 65, Issue 6, 1997, Pages 581-586

  Schmidt, W G ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CHARACTERIZATION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM; INDIUM; MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STABILITY;

ATOMIC LAYER; CHEMICAL POTENTIAL; FORMATION ENERGY; GALLIUM DIMER DERIVED SURFACE STATE; SURFACE RECONSTRUCTION; TOTAL ENERGY CALCULATION;

SURFACES;

EID: 0031352236     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050625     Document Type: Article

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