RF-MBE growth of InAsN layers on GaAs (0 0 1) substrates using a thick InAs buffer layer

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 422-426

  Nishio, Susumu ^a   Nishikawa, Atsushi ^a   Katayama, Ryuji ^a   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds; B3. Infrared devices

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037380412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02220-0     Document Type: Conference Paper

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