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Volumn 44, Issue 4 B, 2005, Pages 2525-2527
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Improvement in extraction efficiency of GaN-based light-emitting diodes with textured surface layer by natural lithography
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Author keywords
GaN based light emitting diodes; Natural lithography; Polystyrene spheres; Textured surface layers
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
ETCHING;
GALLIUM NITRIDE;
INDIUM COMPOUNDS;
LIQUID CRYSTAL DISPLAYS;
LITHOGRAPHY;
POLYSTYRENES;
SEMICONDUCTOR QUANTUM WELLS;
SILICA;
SURFACE TREATMENT;
GAN-BASED LIGHT-EMITTING DIODES;
NATURAL LITHOGRAPHY;
POLYSTYRENE SPHERES;
TEXTURED SURFACE LAYERS;
LIGHT EMITTING DIODES;
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EID: 21244503491
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.2525 Document Type: Conference Paper |
Times cited : (18)
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References (7)
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