InGaN on SiC LEDs for high flux and high current applications

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 399-402

  Baur, J ^a   Hahn, B ^a   Fehrer, M ^a   Eisert, D ^a   Stein, W ^a   Plossl A ^a   Kuhn F ^a   Zull, H ^a   Winter, M ^a   Harle V ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HEAT RESISTANCE; LIGHT EMITTING DIODES; LIGHT SOURCES; SILICON CARBIDE; SOLDERING ALLOYS; SUBSTRATES; SURFACE MOUNT TECHNOLOGY;

BLUE CHIP EMISSION; CHIP SIZE; INDIUM GALLIUM NITRIDE; LIGHT EXTRACTION; THERMAL COUPLING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036962606     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<399::AID-PSSA399>3.0.CO;2-K     Document Type: Article

References (4)

1. Compound Semiconductors 7(1), 7 (2001).
2. U. Strauss, H.-J. Lugauer, A. Weimar, J. Baur, G. Bruederl, D. Eisert, F. Kühn, U. Zehnder, and V. Härle, phys. stat. sol. (c) 0, 276 (2002).
3. www.lumileds.com
4. www.nichia.com